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    DSA2IH00207397.pdf

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    • TOSHIBA TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR GT80J101 GT80J101 tf=0.40/¿s (Max.) V C E (sat) = 3-5V(Max.) SILICON N -C H A N N E L MOS TYPE HIGH POWER SW ITCHING APPLICATIONS. ·
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