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    DSAISS00018375.pdf

    • Infineon Technologies
    • PTAB182002FC Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz Description The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amp
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    DSAISS00018375.pdf preview Download Datasheet

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    TL160 TL256

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