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    DSA0074473.pdf

    • Samsung Electronics
    • SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate C
    • Original
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    DSA0074473.pdf preview Download Datasheet

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    BVDSS SSS4N80AS

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