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DSA00352888.pdf
Manufacturer
Siemens
Partial File Text
Silicon N Channel MOS FET Triode BF 543 Preliminary Data q For RF stages up to 300 MHz preferably in FM applications q IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensiti
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ECAD Model
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Q62702-F1372