DSA00279259.pdf
- Hitachi
- 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features · Low on-resistance R DS(on) = 0.12 typ. (at VGS = 10 V, I D = 2.5 A) · 4V gate drive devices. · La
- Original
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