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    Scans-00102238.pdf

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    • is/AXiNESiisrirjgja Insulated Gate Bipolar Transistor IGT6D20,E20 20 AMPERES 400,500 VOLTS EQUIV. RDS(ON) = 0.12 il This IGT" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS
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    IGT6D20 IGT6E20 vqe 14 vqe 14 E VQE 21 d vqe 23 vqe 23 c VQE 23 E vqe 23 f

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