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    DSAZIHA100025236.pdf

    • American Microsemiconductor
    • B3556 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)90 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100nØ @V(
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