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    DSA00261237.pdf

    • Fujitsu
    • FLK017XP GaAs FET & HEMT Chips FEATURES · · · · High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Source Gate Drain DESCRIPT
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    DSA00261237.pdf preview Download Datasheet

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