DSASW00328404.pdf
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Polyfet RF Devices
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TB1 1 0 A P out/G a in vs Pin F = 3 0 M H z
150
19.0
140
P1dB@ 95W
130
18.0
120
110
17.0
100
90
Pout
16.0
80
70
15.0
60
Gain
Efficiency@ 100W =50%
50
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Original
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