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    Scans-00146583.pdf

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    • Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT11 FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operati
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    "RF Power Transistor" 2222 032 2222-032 2322 157 philips BD228 BLT11 equivalent of 2222 NPN Micro Choke rf transistor mar 8 SOT103

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