DSAE0010747.pdf

Manufacturer Infineon Technologies
Partial File Text IPP028N08N3 G IPI028N08N3 G OptiMOS®3 Power-Transistor Product Summary Features V DS 2.8 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max · N-chann
Type Original
ECAD Model
Part Details Part pricing, stock, data attributes from Findchips.com

DSAE0010747.pdf preview Download Datasheet