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DSA00766815.pdf
Manufacturer
Toshiba
Partial File Text
TC58NVG1S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Elect
Type
Original
ECAD Model
Part Details
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TC58NVG1S3
TC58NVG1S3ET
TC58NVG1S3ETA
TC58NVG1S3ETAI0