DSA2IH0063485.pdf

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Partial File Text HARRIS m SEMICONDUCTOR T7 D E^ B O a St.'ì 0GDGD13 1 fi r - 3 / - * 5 2--20 GHz 12.5 dB GAIN 150 mW JANUARY 1987 HMF-0610 HIGH GAIN POWER GaAs FET PRODUCT DATA HARRIS MI
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