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    DSAH00216900.pdf

    • IXYS
    • High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF12N300 VCES = 3000V IC110 = 11A VCE(sat) 3.2V ISOPLUS i4-PakTM Symbol VCES VCGR VGES VGE
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    IXBF12N300

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