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DSA00152908.pdf
Manufacturer
Cree
Partial File Text
CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree's CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high
Type
Original
Part Details
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cgh09120f
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