Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DSA00759985.pdf

    • Toshiba
    • GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm · · · · Third-generation IGBT Enhancement mode type High speed: tf =
    • Original
    • Price & Stock Powered by Findchips

    DSA00759985.pdf preview Download Datasheet

    User Tagged Keywords

    GT30J101

    Privacy Policy | Digital Services Act | Contact Us | About Us

    Copyright © 2024.

    Supplyframe Tracking Pixel