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    Scans-0081518.pdf

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    • I x Y S CORP 10E » 1 DIXYS MAXIMUM RATINGS Parameter Sym. IXTH19N45 IXTH19N50 IXTM19N45 IXTM19N50 Unit Drain-Source Voltage (1) vdss 450 500 Vdc Drain-Gate Voltage (RGS = 1.0MÎÎ) (1)
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    10V 2A MOSFET N-channel 19n50 ID 48 Megamos IXTH19N45 IXTH19N50 IXTM19N45 IXTM19N50 megamos megamos 13 megamos 48 N-channel MOSFET 800v to-247
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