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DSAISS0006680.pdf
Manufacturer
Central Semiconductor
Partial File Text
PROCESS CPD109R Schottky Diode Low VF Schottky Diode Chip PROCESS DETAILS Die Size 8.3 x 8.3 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 5.4 x 5.4 MILS Top Side Met
Type
Original
ECAD Model
Part Details
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