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    DSAISS0006680.pdf

    • Central Semiconductor
    • PROCESS CPD109R Schottky Diode Low VF Schottky Diode Chip PROCESS DETAILS Die Size 8.3 x 8.3 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 5.4 x 5.4 MILS Top Side Met
    • Original
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    DSAISS0006680.pdf preview Download Datasheet

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