DSAEDA00057816.pdf
- RF Micro Devices
- RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features ï® ï® ï® ï® Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typ
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