DSA2IH00127643.pdf

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Partial File Text PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA835TF FEATURES LOW NOISE: Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V
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Alternative Parts
UPA835TF-T1 UPA835TF-T1

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