DSA0096269.pdf
- Toshiba
- TOSHIBA TIM5964-35SL MICROWAVE POWER GaAs FET PRELIMINARY Features · Low intermodulation distortion - IM3 = -45 dBc at Po = 35.0 dBm · High power - P1dB = 45.5 dBm at 5.9 to 6.4 GHz · High
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