DSASW00201765.pdf
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Infineon Technologies
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Application Note, Rev. 1.0, November 2008
Application Note No. 169
BFP740 SiGe:C Ultra Low Noise RF Transistor in
5 6 GHz LNA Application with 15 dB Gain, 1.3 dB
Noise Figure & ~ 100 nanosecon
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Original
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