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    DSA00153629.pdf

    • Cree
    • CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree's CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high
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    DSA00153629.pdf preview Download Datasheet

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