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DSA00275145.pdf
Manufacturer
Hitachi
Partial File Text
4AM13 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features ยท Low on-resistance N-channel: RDS(on) 0.4 , VGS = 10 V, ID = 1.5 A P-chan
Type
Original
ECAD Model
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Hitachi 2SJ
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