DSAH00672943.pdf
- Toshiba
- 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm · · · High DC current gain: hFE = 2000 (min) (VCE = -2 V, IC = -1.5 A) Low saturation voltage: VCE (
- Original
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