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DSA00153676.pdf
Manufacturer
Cree
Partial File Text
CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree's CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length
Type
Original
ECAD Model
Part Details
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DSA00153676.pdf preview
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CGHV1J070D
G40V4
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