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    DSAISS00017707.pdf

    • Infineon Technologies
    • SGP30N60 SGB30N60, SGW30N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • D
    • Original
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    DSAISS00017707.pdf preview Download Datasheet

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