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    DASF0041857.pdf

    • Toshiba
    • GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications · Third-generation IGBT · Enhancement mode type · High sp
    • Original
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    DASF0041857.pdf preview Download Datasheet

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    GT30J101 GT30J301

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