DSAZIHA100025539.pdf
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American Microsemiconductor
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ECG329 Transistors
Si NPN Power BJT
Military/High-RelN
V(BR)CEO (V)30
V(BR)CBO (V)60
I(C) Max. (A)1
Absolute Max. Power Diss. (W)5
Maximum Operating Temp (øC)
I(CBO) Max. (A)
@V(CBO) (V) (Te
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Original
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