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    Scans-00142457.pdf

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    • OIXYS MegaMOS TM IXTN79N20 V N-Channel Enhancement Mode DSS I D25 R DS<on) = 200 V = 85 A = 25 mß Symbol Test Conditions G Uj IT ) KS 1 ¿S Maximum Ratings V DSS v DGR Tj = 25°C to 1
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    79N20 diode T88 f g megamos ixtn 79n20 IXTN79N20 ixys ixtn 79n20 megamos megamos 13
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