DSAEDA000990.pdf
- Toshiba
- GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm ⢠Enhancement-mode VGE = 2.5 V (min.) (@IC = 150 A) IC = 150 A (max) â
- Original
-
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