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DSAIHSC000104815.pdf
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TOSHIBA TIM8596-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features ⢠High power - P-|dB = 39.5 dBm at 8.5 GHz to 9.6 GHz ⢠High gain - G1dB = 6.0 dB at 8
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ECAD Model
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