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DSAIH00071254.pdf
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OBSOLETE MARCH 1995 I^IICRON D18A 512K X 8, 256K x 16 D R A M D IE DRAM DIE G EN ERAL PHYSICAL SPECIFICATIONS · Wafer thickness =18.5 mils ± 0.5 mils. · The backside wafer surface Is polish
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micron MT4C
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