DSA2IH00100605.pdf

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Partial File Text MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 38V 5964 5 .9 DESCRIPTION T h e M G F C 3 8 V 5 9 6 4 is a n in te rn a lly im p e d a n c e -m a tc h e d GaAs p o w e r F E T especially designed fo
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