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    DSAIHSC000104226.pdf

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    • TOSHIBA MICROWAVE POWER GaAs FET S8855 Power GaAs FETs (Chip Form) Features • High power - P1dB = 31.5 dBm at f= 15 GHz • High gain - G idB = 6.5 dB a tf = 15 GHz • Suitable for Ku-
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    DSAIHSC000104226.pdf preview Download Datasheet

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