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DSAE0013592.pdf
Manufacturer
Infineon Technologies
Partial File Text
IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS®2 Power-Transistor Product Summary Features V DS 6.2 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),m
Type
Original
ECAD Model
Part Details
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DSAE0013592.pdf preview
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IPP06CNE8N
PG-TO220-3
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