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    DSA2IH00206597.pdf

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    • TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (C-Band) Features · High power - P idB = 39 dBm at 5.0 GHz to 5.3 GHz · High gain - G idB = 9.0 dB at 5.0 GHz to 5.3 GHz · Broad
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