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DSA00514775.pdf
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Chino-Excel Technology
Partial File Text
CEP50N06/CEB50N06 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 50A ,RDS(ON) = 17m (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). Hi
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Original
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CEB50N06
CEP50N06
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