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    Scans-00151773.pdf

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    • TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA MICROWAVE POWER GaAs FET JS9P05-AS FEATURES: ■HIGH POWER P1dB=28dBm ■CHIP FORM f = 38GHz IHIGH GAIN GldB= 6. 5dB f =38GHz RF PERFORMANC
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