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DSADA001698.pdf
Manufacturer
Hewlett-Packard
Partial File Text
Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters.
Datasheet Type
Original
ECAD Model
Part Details
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"TRANSISTORS SELECTION GUIDE"
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