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    DSA00175076.pdf

    • Fujitsu
    • FLC307XP GaAs FET & HEMT Chips FEATURES · · · · High Output Power: P1dB = 34.8dBm(Typ.) High Gain: G1dB = 9.5dB(Typ.) High PAE: hadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION
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    DSA00175076.pdf preview Download Datasheet

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    C-Band Power GaAs FET HEMT Chips fujitsu gaas fet fujitsu hemt GaAs FET HEMT Chips

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