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    DSAFRAZ0010686.pdf

    • Infineon Technologies
    • GaAlAs-Lumineszenzdiode (660 nm) GaAlAs Light Emitting Diode (660 nm) SFH 464 Wesentliche Merkmale · Hergestellt im Schmezepitaxieverfahren · Kathode galvanisch mit dem Gehäuseboden verbunden
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    DSAFRAZ0010686.pdf preview Download Datasheet

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