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    DSAEDA000116122.pdf

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    • PD - 97427D IRFH7911PbF HEXFET® Power MOSFET VDS Q1 30 Q2 30 V RDS(on) max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID Ã : 8.3 nC 13 (@TA = 25°C)
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