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    DSA00184834.pdf

    • United Monolithic Semiconductors
    • PH25 0.25µm Very Low Noise Process µ Very Low Noise and Medium Power PHFET technology Description - "Pseudomorphic" PM-HEMT technology - 0.25µm gate length - GaAlAs/GaInAs/GaAs epitaxial acti
    • Original
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    DSA00184834.pdf preview Download Datasheet

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