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DSA00184834.pdf
Manufacturer
United Monolithic Semiconductors
Partial File Text
PH25 0.25µm Very Low Noise Process µ Very Low Noise and Medium Power PHFET technology Description - "Pseudomorphic" PM-HEMT technology - 0.25µm gate length - GaAlAs/GaInAs/GaAs epitaxial acti
Type
Original
ECAD Model
Part Details
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pHfet
power transistor gaas
pseudomorphic HEMT