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    DSAASSA0004584.pdf

    • Toshiba
    • TC58NYG1S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Elect
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    DSAASSA0004584.pdf preview Download Datasheet

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