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    DASF0041714.pdf

    • Toshiba
    • 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF = 0.42V (typ.) l Low reverse current : IR = 500nA (max)
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    DASF0041714.pdf preview Download Datasheet

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