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DSA0065181.pdf
Manufacturer
Cree
Partial File Text
CGH40010 10 W, RF Power GaN HEMT Cree's CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purp
Type
Original
ECAD Model
Part Details
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40010P
CGH40010
CGH40010 Large Signal Model
CGH40010-TB
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Cree Microwave
hemt .s2p
transistor RF S-parameters