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    DSASW00135386.pdf

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    • PROCESS CP230 Power Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 x 80 MILS Die Thickness 8.0 MILS Base Bonding
    • Original

    DSASW00135386.pdf preview Download Datasheet

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    CJD122 CP230 CZT122
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