DSA2IH00100590.pdf

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Partial File Text MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF1601B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 6 0 1 B , m ed iu m -p o w er GaAs FET w ith an N channel S ch o ttk y gate, is designed fo r use i
Type Scan
ECAD Model

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