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    • bDE D ÔS3SLGS GGM57Ö4 ^7 SIEMENS IGBT Module Preliminary Data ISIEfi SIEMENS AKTIENGESELLSCHAF BSM 10 GD 100 D VCE = 1000 V I c = 6 x 11 A at Tc = 25 C /c = 6 x 10 A at 7"c = 40 'C • Power module
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    BSM10GD100 BSM10GD100D btb 148 600 siemens igbt transient Diode bge
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